leshan radio company, ltd. LNTK3043PT5G v (br)dss r ds(on) typ i d max 20 v 1.5 @ 4.5 v 2.4 @ 2.5 v 285 ma device package shipping ? ordering information sot?723 case 631aa marking diagram top view 3 12 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 5.1 @ 1.8 v kb 1 kb = device code m = date code 1 ? gate 2 ? source 3 ? drain 6.8 @ 1.65 v m *these packages are inherently pb?free. power mosfet 20 v, 285 ma, p?channel with esd protection, sot?723 features ? enables high density pcb manufacturing ? 44% smaller footprint than sc?89 and 38% thinner than sc?89 ? low voltage drive makes this device ideal for portable equipment ? low threshold levels, v gs(th) < 1.3 v ? low profile (< 0.5 mm) allows it to fit easily into extremely thin environments such as portable electronics ? operated at standard logic level gate drive, facilitating future migration to lower levels using the same basic topology ? these are pb?free devices applications ? interfacing, switching ? high speed switching ? cellular phones, pdas maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source voltage v dss 20 v gate?to?source voltage v gs 10 v continuous drain current (note 1) steady state t a = 25 c i d 255 ma t a = 85 c 185 t 5 s t a = 25 c 285 power dissipation (note 1) steady state t a = 25 c p d 440 mw t 5 s 545 continuous drain current (note 2) steady state t a = 25 c i d 210 ma t a = 85 c 155 power dissipation (note 2) t a = 25 c p d 310 mw pulsed drain current t p = 10 s i dm 400 ma operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) (note 2) i s 286 ma lead temperature for soldering purposes (1/8? from case for 10 seconds) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 2. surface?mounted on fr4 board using the minimum recommended pad size. rev .o 1/5 s-LNTK3043PT5G ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. LNTK3043PT5G sot?723* 8000 / tape & reel s-LNTK3043PT5G
LNTK3043PT5G , s-LNTK3043PT5G leshan radio company, ltd. thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 3) r ja 280 c/w junction?to?ambient ? t = 5 s (note 3) r ja 228 junction?to?ambient ? steady state minimum pad (note 4) r ja 400 3. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 4. surface?mounted on fr4 board using the minimum recommended pad size. electrical characteristics (t j = 25 c unless otherwise specified) parameter test condition symbol min typ max unit off characteristics drain?to?source breakdown voltage v gs = 0 v, i d = 100 a v (br)dss 20 v drain?to?source breakdown voltage temperature coefficient i d = 100 a, reference to 25 c v (br)dss /t j 27 mv/ c zero gate voltage drain current v gs = 0 v, v ds = 16 v t j = 25 c i dss 1 a t j = 125 c 10 gate?to?source leakage current v ds = 0 v, v gs = 5 v i gss 1 a on characteristics (note 3) gate threshold voltage v gs = v ds , i d = 250 a v gs(th) 0.4 1.3 v gate threshold temperature coefficient v gs(th) /t j ?2.4 mv/ c drain?to?source on resistance v gs = 4.5v, i d = 10 ma r ds(on) 1.5 3.4 v gs = 4.5v, i d = 255 ma 1.6 3.8 v gs = 2.5 v, i d = 1 ma 2.4 4.5 v gs = 1.8 v, i d = 1 ma 5.1 10 v gs = 1.65 v, i d = 1 ma 6.8 15 forward transconductance v ds = 5 v, i d = 100 ma g fs 0.275 s charges, capacitances and gate resistance input capacitance v gs = 0 v, f = 1 mhz, v ds = 10 v c iss 11 pf output capacitance c oss 8.3 reverse transfer capacitance c rss 2.7 switching characteristics, vgs= 4.5 v (note 4) turn?on delay time v gs = 4.5 v, v dd = 5 v, i d = 10 ma, r g = 6 t d(on) 13 ns rise time t r 15 turn?off delay time t d(off) 94 fall time t f 55 drain?source diode characteristics forward diode voltage v gs = 0 v, i s = 286 ma t j = 25 c v sd 0.83 1.2 v t j = 125 c 0.69 reverse recovery time v gs = 0 v, v dd = 20 v, disd/dt = 100 a/ s, i s = 286 ma t rr 9.1 ns charge time t a 7.1 discharge time t b 2.0 reverse recovery charge q rr 3.7 nc 5. pulse test: pulse width 300 s, duty cycle 2% 6. switching characteristics are independent of operating junction temperatures rev .o 2/5
leshan radio company, ltd. typical performance curves t j = 125 c 0 0.1 1 v ds , drain?to?source voltage (volts) i d, drain current (amps) 0 figure 1. on?region characteristics 1.5 0.1 0 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) figure 3. on?resistance vs. gate?to?source voltage r ds(on), drain?to?source resistance ( ) i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage i d, drain current (amps) ?50 0 ?25 25 4.0 9.0 2.0 1.0 0 50 150 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c t j = ?55 c 75 t j = 25 c r ds(on), drain?to?source resistance t j = 25 c r ds(on), drain?to?source resistance ( ) v gs = 2.5 v 1 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) 15 v gs = 0 v i dss , leakage (na) t j = 150 c t j = 125 c 2.0 v 2.2 v v gs = 4.5 v v ds 5 v 10 1.4 v 2 0 v gs = 3 v to 10 v 0.2 0.3 125 100 2.5 10 v gs , gate?to?source voltage (volts) 2 3 4 16 1 4 6 2 4 3 5 100 5 35 12 00 .3 0.1 3.0 0.2 2 1000 1.6 v 2.5 v 5 8 0.2 0.3 i d = 0.255 a t j = 25 c 01 10 4 1.8 v 27 59 3 5.0 v gs = 2.5 v, i d = 10 ma v gs = 4.5 v, i d = 10 ma v gs = 1.65 v, i d = 1 ma 6.0 7.0 8.0 v gs = 1.8 v, i d = 10 ma rev .o 3/5 LNTK3043PT5G , s-LNTK3043PT5G
leshan radio company, ltd. typical performance curves figure 7. capacitance variation 0.1 0 v sd , source?to?drain voltage (volts) figure 8. resistive switching time variation vs. gate resistance i s , source current (amps) v gs = 0 v figure 9. diode forward voltage vs. current 1.0 0.6 0.4 0.3 r g , gate resistance (ohms) 1 10 100 100 1 t, time (ns) v dd = 5 v i d = 10 ma v gs = 4.5 v t r t d(on) 1000 t f t d(off) 0.2 0.4 0.7 0.5 10 0.9 0.8 t j = 125 c t j = 150 c t j = 25 c t j = ?55 c gate?to?source or drain?to?source voltage (v) 0 5 10 15 20 25 10 5 0 5 10 15 20 t j = 25 c v gs = 0 v v ds = 0 v c iss c iss c rss c rss c oss c, capacitance (pf) v ds v gs rev .o 4/5 LNTK3043PT5G , s-LNTK3043PT5G
leshan radio company, ltd. package dimensions dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ?y? ?x? x 0.08 (0.0032) y 2x e 1 2 3 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 sot?723 soldering footprint* rev .o 5/5 LNTK3043PT5G , s-LNTK3043PT5G
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